4v drive nch mosfet RSD100N10 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) 4v drive. 3) high power package. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 2500 RSD100N10 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v continuous i d ? 10 a pulsed i dp ? 20 a continuous i s 10 a pulsed i sp 20 a power dissipation p d 20 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 p w ? 10 ? s, duty cycle ? 1% *2 t c =25c *3 please use within the range of soa. ? thermal resistance symbol limits unit channel to case rth (ch-c) 6.25 ? c / w * t c =25c parameter type source current (body diode) drain current parameter *2 *1 *1 * (1) gate (2) drain (3) source ? 1 esd protection diode ? 2 body diode *3 *3 cpt3 (sc-63) 6.5 2.3 (2) (3) 0.65 0.9 (1) 0.75 2.30.9 5.1 1.5 5.5 2.3 0.5 1.0 0.5 9.5 2.5 0.8min. 1.5 ?2 ?1 (1) (2) (3) 1/6 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RSD100N10 ? electrical characteristics (ta = 25 q c) symbol min. typ. max. unit gate-source leakage i gss -- r 10 p av gs = r 20v, v ds =0v drain-source breakdown voltage v (br)dss 100 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 p av ds =100v, v gs =0v gate threshold voltage v gs (th) 1 - 2.5 v v ds =10v, i d =1ma - 95 133 i d =5a, v gs =10v - 100 140 i d =5a, v gs =4.5v - 105 147 i d =5a, v gs =4v forward transfer admittance l y fs l 4.5 - - s v ds =10v, i d =5a input capacitance c iss - 700 - pf v ds =25v output capacitance c oss - 65 - pf v gs =0v reverse transfer capacitance c rss - 40 - pf f=1mhz turn-on delay time t d(on) - 10 - ns v dd 50v, i d =5a rise time t r - 17 - ns v gs =10v turn-off delay time t d(off) - 50 - ns r l =10 : fall time t f - 20 - ns r g =10 : total gate charge q g - 18 - nc v dd 50v, i d =10a gate-source charge q gs -2-ncv gs =10v gate-drain charge q gd - 4.5 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =10a, v gs =0v *pulsed conditions conditions m : parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD100N10 ? electrical characteristic curves (ta=25 ? c) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =2.0v t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =2.0v t a =25 c pulsed 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 c pulsed 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD100N10 0.01 0.1 1 10 100 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : is [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 50 100 150 200 250 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =10a i d =5a t a =25 c pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 50v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =50v i d =10a pulsed 4/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD100N10 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.14 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse mounted on a recommended land. (20mm 20mm 0.8mm) rth (ch - a) =111.7 c /w rth (ch - a) (t)=r(t) rth (ch - a) 0.01 0.1 1 10 100 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.15 maximum safe operating area t c =25 c single pulse operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 5/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD100N10 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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